The correct relationship between the two current gains and in a transistor is
For a given circuit of ideal p-n junction diode, which of the following is correct?
In forward biasing the voltage across R is V
In reverse biasing the voltage across R is V
In forward biasing the voltage across R is 2V
In reverse biasing the voltage across R is 2V
A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be:
a p-n junction
an intrinsic semiconductor
a p-type semiconductor
an n-type semiconductor
Barrier potential of a p-n junction diode does not depend on
forward bias
doping density
diode design
temperature
Copper has face-centered cubic (fcc) lattice with interatomic spacing equal to 2.54Å. The value of lattice constant for this lattice is
1.27Å
5.08Å
2.54Å
3.59Å
For a transistor , the current gain in common-emitter configuration is
6
12
24
48
If and β are current gains in common-base and common-emitter configurations of a transistor, then β is equal to
Sodium has body centred packing. Distance between two nearest atoms is 3.7Å. The lattice parameter is
6.8Å
4.3Å
3.0Å
8.6Å
If the lattice parameter for a crystalline structure is 3.6Å, then the atomic radius in fcc crystals is
1.81Å
2.10Å
2.92Å
When a triode is used as an amplifier the phase difference between the input signal voltage and the output is
zero
π
π/2
π/4
