In a common- base configuration of transistor will be , then current gain in common emitter configuration of transistor will be
49
98
4.9
24.5
Which of the following when added as an impurity into silicon produces n-type semiconductor?
P
Al
B
Mg
In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table
A B Y
0 0 0
0 1 0
1 0 0
1 1 1
0 0 1
0 1 1
1 0 1
1 1 0
If the lattice parameter for a crystalline structure is 3.6Å, then the atomic radius in fcc crystals is
1.81Å
2.10Å
2.92Å
1.27Å
A transistor is operated in common emitter configuration at constant collector voltage Vc=1.5V such that a change in the base current from 100 to 150 produces a change in the collector current from 5mA to 10 mA. The current gain () is
67
75
100
50
The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be
90
10
1.25
Si and Cu are cooled to a temperature of 300 K, then resistivity
for Si increases and for Cu decreases
for Cu increases and for Si decreases
decreases for both Si and Cu
increases for both Si and Cu
The diode used in the circuit shown in the figure has a constant voltage drop of 0.5V at all currents and a maximum power rating of 100 milliwatt. What should be the value of the resistor R, connected in series with the diode, for obtaining maximum current i?
200
6.67
5
1.5
The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without filter is 10V. The DC component of the output voltage is
10V
A p-n photodiode is made of a material with a band gap of 2.0eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
10 × 1014 Hz
5 × 1014 Hz
1 × 1014 Hz
20 × 1014 Hz
