Barrier potential of a p-n junction diode does not depend on
forward bias
doping density
diode design
temperature
A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be
a p-n junction
an intrinsic semiconductor
a p-type semiconductor
an n-type semiconductor
At 0 k, an intrinsic semiconductor behaves as
a super conductor
a semi conductor
a perfect conductor
a perfect insulator
Transistors are
electrons - sensitive device
pressure - sensitive device
holes - sensitive device
temperature - sensitive device
Which of the following when added as an impurity into silicon produces n-type semiconductor?
P
AI
B
Mg
The part of the transistor which is heavily doped to produce large number of majority carriers is
emitter
base
collector
Any of the above depending upon the nature of transistor
On increasing the reverse bias to a large valve in a p-n junction, the diode current
remains fixed
increases slowly
decreases slowly
suddenly increases
The unit of capacitance is
henry
farad
weber
tesla
Zener diode is used for
producing oscillations in an oscillator
amplification
stabilisation
rectification
Radio waves of constant amplitude can be generated with
FET
Filter
Rectifier
Oscillator
