When n-type semiconductor is heated
number of electrons increases while that of holes decreases
number of holes increases while that of electrons decreases
number of electrons and holes remains same
number of electrons and holes increases equally
p - n junction is said to be forward biased, when
the positive pole of the battery is joined to the p-semiconductor and negative pole to the n- semiconductor.
the positive pole of the battery is joined to the n - semiconductor and negative pole to the p - semiconductor
the positive pole of the battery is connected to the n - semiconductor and p - semiconductor
a mechanical force is applied in the forward direction
Barrier potential of a p-n junction diode does not depend on
forward bias
doping density
diode design
temperature
A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be
a p-n junction
an intrinsic semiconductor
a p-type semiconductor
an n-type semiconductor
A half wave rectifier is being used to rectify an alternating voltage of frequency 50 Hz. The number of pulses of rectified current obtained in one second is
25
100
50
200
To obtain a p-type germanium semiconductor, it must be doped with
phosphorus
indium
antimony
arsenic
In a semi conductor crystal if the current flows due to breakage of crystal bonds, then the semiconductor is called
acceptor
donor
extrinsic semiconductor
intrinsic semiconductor
The part of the transistor which is heavily doped to produce large number of majority carriers is
emitter
base
collector
Any of the above depending upon the nature of transistor
Transistors are
electrons - sensitive device
pressure - sensitive device
holes - sensitive device
temperature - sensitive device
Zener diode is used for
producing oscillations in an oscillator
amplification
stabilisation
rectification
